Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260NPBF

RS庫存編號:: 542-9771
製造零件編號:: IRFP260NPBF
製造商:: Infineon

Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260NPBF

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RS庫存編號:: 542-9771
製造零件編號:: IRFP260NPBF
製造商:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF

This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.

Features & Benefits

• Supports continuous drain currents up to 50A for strong performance
• Operates efficiently with a maximum drain-source voltage of 200V
• Enhancement mode design offers improved control and versatility
• Low Rds(on) of 40mΩ reduces energy losses
• Designed for through-hole mounting, facilitating easy installation

Applications

• Utilised in power supply circuits for managing high currents
• Suitable for automotive requiring durable electronic components
• Applied in industrial equipment for effective power control
• Commonly found in renewable energy systems to enhance efficiency

What is the maximum power dissipation for this component?

The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.

How does the low Rds(on) benefit circuit efficiency?

The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.

What are the advantages of using this MOSFET in power applications?

This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.

Is it easy to install with other components in a circuit?

The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

屬性	值
Channel Type	N
Maximum Continuous Drain Current	50 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-247AC
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	40 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	5.3mm
Number of Elements per Chip	1
Length	15.9mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	234 nC @ 10 V
Transistor Material	Si
Forward Diode Voltage	1.3V
Height	20.3mm
Minimum Operating Temperature	-55 °C