N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-247AC Infineon IRFP140NPBF
- RS庫存編號:
- 541-1269
- Distrelec 貨號:
- 303-41-344
- 製造零件編號:
- IRFP140NPBF
- 製造商:
- Infineon
可享批量折扣
單價 個**
TWD60.00
(不含稅)
TWD63.00
(含稅)
122 現貨庫存，可於6工作日發貨。*
* 交貨日期可能會根據您選擇的數量和交貨地址而變更。
訂單金額滿 TWD2,857.00 (未稅) 即可享受 免費 送貨服務
單位 | 每單位 |
|---|---|
| 1 - 6 | TWD60.00 |
| 7 - 12 | TWD59.00 |
| 13 + | TWD55.00 |
** 參考價格
- RS庫存編號:
- 541-1269
- Distrelec 貨號:
- 303-41-344
- 製造零件編號:
- IRFP140NPBF
- 製造商:
- Infineon
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon HEXFET Series MOSFET, 33A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRFP140NPBF
This MOSFET plays a crucial role in improving efficiency and performance across various electronic applications. It is designed to accommodate high currents and voltages, offering dependable power management solutions in automation systems, electronics, and mechanical industries. Its ability to function under extreme conditions ensures versatility in numerous applications.
Features & Benefits
• Maximum continuous drain current of 33A for enhanced load capabilities
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds
• Drain-source voltage rating of up to 100V for effective performance
• Low maximum drain-source resistance of 52 mΩ for efficient operation
• Designed for power dissipation of 140W to manage thermal conditions
• Typical gate charge of 94 nC at 10V for rapid switching speeds
Applications
• Reliable use in switching power supplies
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification
• Motor control for accurate operation
• High current in power conversion systems
• Integration into power amplifiers for improved signal amplification
What is the maximum voltage this component can handle?
It withstands a maximum drain-source voltage of 100V, suitable for high-voltage applications.
How does the gate charge affect the operation?
A typical gate charge of 94 nC at 10V facilitates faster switching, enhancing circuit efficiency.
What are the thermal characteristics of this component?
It operates effectively between -55°C and +175°C, ensuring reliability in different environments.
Can this component be used in automation projects?
Yes, its high continuous current capacity and voltage ratings are ideal for various automation applications.
How does the low RDS(on) enhance its performance?
The low maximum drain-source resistance helps to reduce conduction losses, leading to more energy-efficient operation.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
屬性 | 值 |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | TO-247AC |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 52 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 140 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 94 nC @ 10 V |
| Width | 5.3mm |
| Maximum Operating Temperature | +175 °C |
| Length | 15.9mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Forward Diode Voltage | 1.3V |
| Minimum Operating Temperature | -55 °C |
| Height | 20.3mm |