Vishay IRFPG50 Type N-Channel Power MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247AC IRFPG50PBF

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包裝方式:
RS庫存編號:
541-1095
Distrelec 貨號:
301-91-596
製造零件編號:
IRFPG50PBF
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.1A

Maximum Drain Source Voltage Vds

1kV

Package Type

TO-247AC

Series

IRFPG50

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

190nC

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

190W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

15.87mm

Width

5.31mm

Height

20.7mm

Automotive Standard

No

Vishay IRFPG50 Series Power MOSFET, 1000V Drain Source Voltage, 6.1A Continuous Drain Current - IRFPG50PBF


This power MOSFET is a high-voltage N-channel enhancement device designed for power switching and control in industrial electronics. It is supplied for through-hole mounting in a TO-247AC package and is suitable for applications that require substantial voltage hold-off and thermal headroom while operating across a wide ambient temperature range.

Features and Benefits:


• Withstands up to 1000V for high-voltage switching applications
• Continuous drain current rating of 6.1 A enables sustained load handling
• Drain-source on-resistance of 2 Ω reduces conduction losses under load
• Maximum power dissipation of 190W allows higher power throughput
• Typical gate charge of 190 nC supports predictable switching behaviour
• Gate-source limit of 20V protects the gate from excessive drive voltage

Applications


• Suitable for high-voltage motor-drive stages in automation systems
• Ideal for switching supplies requiring robust voltage margins
• Used with power converters in industrial electrical control panels
• Can be used for load switching in mechanical actuation systems

What mounting method is required for installation?


It requires a through-hole mounting approach and is supplied in a TO-247AC style package that is compatible with standard through-hole heatsinking arrangements.

How does it behave in extreme temperature environments?


It is specified to operate from -55 °C up to 150 °C, providing capability for use in both sub-zero and elevated-temperature conditions without derating outside those limits.

What are the gate-drive constraints to observe?


The maximum permissible gate-source voltage is 20 V, so gate-drive circuitry should be designed to avoid exceeding this threshold.

What thermal management considerations are necessary?


With a maximum power dissipation of 190 W, effective heatsinking and thermal coupling to a chassis or dedicated sink are necessary to maintain junction temperatures within safe limits.

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