Infineon SIPMOS N-Channel MOSFET, 100 mA, 250 V Depletion, 3-Pin SOT-23 BSS139H6327XTSA1

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TWD21.00

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TWD22.05

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包裝方式：
RS庫存編號:
354-5770
製造零件編號:
BSS139H6327XTSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

N

Maximum Continuous Drain Current

100 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-23

Series

SIPMOS

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

14 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Typical Gate Charge @ Vgs

2.3 nC @ 5 V

Length

2.9mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

1mm

Minimum Operating Temperature

-55 °C

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Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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