STMicroelectronics MASTERG Type P, Type N-Channel MOSFET, 6.5 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN4LTR
- RS庫存編號:
- 287-7043P
- 製造零件編號:
- MASTERGAN4LTR
- 製造商:
- STMicroelectronics
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享受批量購買折扣
額外添加50件可節省TWD250.00
查看批量定價選項小計 25 件 (按連續帶提供)*
TWD5,500.00
(不含稅)
TWD5,775.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 300 個，準備發貨
單位 | 每單位 | 節省 |
|---|---|---|
| 25 - 49 | TWD220.00 | - |
| 50 - 99 | TWD215.00 | TWD250.00 |
| 100 - 249 | TWD211.00 | TWD900.00 |
| 250 + | TWD206.00 | TWD3,500.00 |
* 參考價格
- RS庫存編號:
- 287-7043P
- 製造零件編號:
- MASTERGAN4LTR
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | QFN-9 | |
| Series | MASTERG | |
| Mount Type | Surface | |
| Pin Count | 31 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Power Dissipation Pd | 40mW | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS, ECOPACK | |
| Height | 1mm | |
| Length | 9mm | |
| Width | 9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type QFN-9 | ||
Series MASTERG | ||
Mount Type Surface | ||
Pin Count 31 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Power Dissipation Pd 40mW | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS, ECOPACK | ||
Height 1mm | ||
Length 9mm | ||
Width 9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Zero reverse recovery loss
UVLO protection on VCC
Internal bootstrap diode
Interlocking function
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