STMicroelectronics MASTERG Type N, Type P-Channel MOSFET, 9.7 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN1LTR
- RS庫存編號:
- 287-7041
- 製造零件編號:
- MASTERGAN1LTR
- 製造商:
- STMicroelectronics
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TWD244.00
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訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 節省 |
|---|---|---|
| 1 - 24 | TWD244.00 | - |
| 25 - 49 | TWD219.00 | 10% |
| 50 - 99 | TWD213.00 | 12% |
| 100 - 249 | TWD208.00 | 14% |
| 250 + | TWD204.00 | 16% |
* 參考價格
- RS庫存編號:
- 287-7041
- 製造零件編號:
- MASTERGAN1LTR
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 9.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | QFN-9 | |
| Series | MASTERG | |
| Mount Type | Surface | |
| Pin Count | 31 | |
| Maximum Drain Source Resistance Rds | 220mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 40mW | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 2nC | |
| Maximum Operating Temperature | 125°C | |
| Width | 9mm | |
| Standards/Approvals | RoHS, ECOPACK | |
| Height | 1mm | |
| Length | 9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 9.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type QFN-9 | ||
Series MASTERG | ||
Mount Type Surface | ||
Pin Count 31 | ||
Maximum Drain Source Resistance Rds 220mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 40mW | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 2nC | ||
Maximum Operating Temperature 125°C | ||
Width 9mm | ||
Standards/Approvals RoHS, ECOPACK | ||
Height 1mm | ||
Length 9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Zero reverse recovery loss
UVLO protection on VCC
Internal bootstrap diode
Interlocking function
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