STMicroelectronics STP Type N-Channel MOSFET, 6 A, 800 V Enhancement, 3-Pin TO-220 STP80N900K6
- RS庫存編號:
- 285-5914
- 製造零件編號:
- STP80N900K6
- 製造商:
- STMicroelectronics
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小計（1 管，共 50 件）*
TWD1,980.00
(不含稅)
TWD2,079.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 + | TWD39.60 | TWD1,980.00 |
* 參考價格
- RS庫存編號:
- 285-5914
- 製造零件編號:
- STP80N900K6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.9mm | |
| Width | 10.4 mm | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 28.9mm | ||
Width 10.4 mm | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
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