STMicroelectronics STP Type N-Channel MOSFET, 7 A, 800 V Enhancement, 3-Pin TO-220 STP80N600K6
- RS庫存編號:
- 275-1355
- 製造零件編號:
- STP80N600K6
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
小計（1 管，共 50 件）*
TWD2,425.00
(不含稅)
TWD2,546.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 50 + | TWD48.50 | TWD2,425.00 |
* 參考價格
- RS庫存編號:
- 275-1355
- 製造零件編號:
- STP80N600K6
- 製造商:
- STMicroelectronics
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | STP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 86W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 10.7nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 4.6mm | |
| Width | 10.4 mm | |
| Length | 28.9mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series STP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 86W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 10.7nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 4.6mm | ||
Width 10.4 mm | ||
Length 28.9mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics high voltage N-channel power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
Zener protected
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