Vishay SISD Type N-Channel MOSFET, 198 A, 30 V Enhancement, 8-Pin 1212-F SISD5300DN-T1-GE3
- RS庫存編號:
- 279-9979
- 製造零件編號:
- SISD5300DN-T1-GE3
- 製造商:
- Vishay
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TWD350.00
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TWD367.52
(含稅)
訂單超過 $1,300.00 免費送貨
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- 6,000 件從 2026年8月10日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 4 - 56 | TWD87.50 | TWD350.00 |
| 60 - 96 | TWD65.80 | TWD263.20 |
| 100 - 236 | TWD58.30 | TWD233.20 |
| 240 - 996 | TWD57.30 | TWD229.20 |
| 1000 + | TWD56.00 | TWD224.00 |
* 參考價格
- RS庫存編號:
- 279-9979
- 製造零件編號:
- SISD5300DN-T1-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 198A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SISD | |
| Package Type | 1212-F | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00087Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 36.2nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 198A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SISD | ||
Package Type 1212-F | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00087Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 36.2nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
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