Vishay SiR Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin SO-8 SIR5108DP-T1-RE3
- RS Stock No.:
- 279-9942
- Mfr. Part No.:
- SIR5108DP-T1-RE3
- Brand:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
TWD340.00
(exc. VAT)
TWD357.00
(inc. VAT)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | TWD68.00 | TWD340.00 |
| 50 - 95 | TWD65.20 | TWD326.00 |
| 100 - 245 | TWD57.80 | TWD289.00 |
| 250 - 995 | TWD56.80 | TWD284.00 |
| 1000 + | TWD55.60 | TWD278.00 |
*price indicative
- RS Stock No.:
- 279-9942
- Mfr. Part No.:
- SIR5108DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0105Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0105Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
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