Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- RS庫存編號:
- 279-9895
- 製造零件編號:
- SI4190BDY-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 4 件）*
TWD353.20
(不含稅)
TWD370.88
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 4,980 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 4 - 56 | TWD88.30 | TWD353.20 |
| 60 - 96 | TWD82.80 | TWD331.20 |
| 100 - 236 | TWD73.80 | TWD295.20 |
| 240 - 996 | TWD72.80 | TWD291.20 |
| 1000 + | TWD71.50 | TWD286.00 |
* 參考價格
- RS庫存編號:
- 279-9895
- 製造零件編號:
- SI4190BDY-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SI | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.093Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 8.4W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SI | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.093Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 8.4W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
相關連結
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3
- Vishay SI Type N-Channel MOSFET 150 V Enhancement, 8-Pin SO-8 SI4848BDY-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4151DY-T1-GE3
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3
- Vishay Type N 8 A 8-Pin SO-8 SI4534DY-T1-GE3
- Vishay SI9634DY 4 Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SI9634DY-T1-GE3
- Vishay SiRA74DP Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SiRA74DP-T1-GE3
- Vishay SIRS Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIRS4401DP-T1-GE3