STMicroelectronics STW N-Channel MOSFET, 92 A Enhancement, 4-Pin TO-247-4 STW65N023M9-4
- RS庫存編號:
- 275-1382P
- 製造零件編號:
- STW65N023M9-4
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計 5 件 (以管提供)*
TWD3,250.00
(不含稅)
TWD3,412.50
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 285 件從 2026年9月21日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 5 - 9 | TWD650.00 |
| 10 - 29 | TWD638.00 |
| 30 - 119 | TWD625.00 |
| 120 + | TWD612.00 |
* 參考價格
- RS庫存編號:
- 275-1382P
- 製造零件編號:
- STW65N023M9-4
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 92A | |
| Package Type | TO-247-4 | |
| Series | STW | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 463W | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 5mm | |
| Width | 15.8mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 92A | ||
Package Type TO-247-4 | ||
Series STW | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 463W | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 5mm | ||
Width 15.8mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
相關連結
- EOZ Push Button Switch Panel Mount SPST 250V ac, IP65
- Festo Compressed Air Pipe Blue Polyurethane 6mm x 50m PUN Series, 159664
- Vishay LH1511BT Series Solid State Relay PCB Mount, 200 V ac/dc Load
- Portescap Brushless DC Motor 15 V dc 9300 rpm, 3mm Shaft Diameter
- Amphenol Industrial Pin Contacts Screw
- Fluke 179 Handheld Digital Multimeter 10A ac Max 1000V ac Max
- Honeywell Amplified Airflow Sensor AWM3000 Series
- Jumo diraTRON Panel Mount PID Temperature Controller 3 Output 2 Relay 110 → 240 V