Infineon OptiMOS-TM3 Type N-Channel MOSFET, 80 A, 100 V N, 3-Pin PG-TO-220
- RS庫存編號:
- 273-7467
- 製造零件編號:
- IPP086N10N3GXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD144.00
(不含稅)
TWD151.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 470 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD72.00 | TWD144.00 |
| 10 - 18 | TWD64.50 | TWD129.00 |
| 20 - 98 | TWD63.50 | TWD127.00 |
| 100 - 248 | TWD52.00 | TWD104.00 |
| 250 + | TWD46.00 | TWD92.00 |
* 參考價格
- RS庫存編號:
- 273-7467
- 製造零件編號:
- IPP086N10N3GXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-TO-220 | |
| Series | OptiMOS-TM3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Length | 40mm | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Standards/Approvals | IEC61249-2-21, JEDEC1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-TO-220 | ||
Series OptiMOS-TM3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Length 40mm | ||
Width 40 mm | ||
Height 1.5mm | ||
Standards/Approvals IEC61249-2-21, JEDEC1 | ||
Automotive Standard No | ||
The Infineon MOSFET is ideal for high frequency switching and synchronous rectification. This MOSFET is qualified according to JEDEC1 for target application. It is a N channel MOSFET and halogen free according to IEC61249 2 21.
Pb free lead plating
RoHS compliant
Excellent gate charge
Very low on resistance
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