STMicroelectronics STP N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-220 STP80N340K6
- RS庫存編號:
- 269-5164P
- 製造零件編號:
- STP80N340K6
- 製造商:
- STMicroelectronics
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可享批量折扣
查看批量定價選項小計 10 件 (以管提供)*
TWD1,340.00
(不含稅)
TWD1,407.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 474 件從 2026年9月21日 起發貨
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單位 | 每單位 |
|---|---|
| 10 - 18 | TWD134.00 |
| 20 - 28 | TWD127.00 |
| 30 - 38 | TWD120.50 |
| 40 + | TWD115.00 |
* 參考價格
- RS庫存編號:
- 269-5164P
- 製造零件編號:
- STP80N340K6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | STP | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 340mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 17.8nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 115W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 28.9mm | |
| Standards/Approvals | RoHS | |
| Width | 10.4mm | |
| Height | 4.6mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series STP | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 340mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 17.8nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 115W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 28.9mm | ||
Standards/Approvals RoHS | ||
Width 10.4mm | ||
Height 4.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is a very high voltage is designed using the ultimate MDmesh K6 technology result in the best class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ultra low gate charge
100 percent avalanche tested
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