製造零件編號

Vishay SQJQ936E 4 Dual N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ936E-T1_GE3

RS庫存編號:: 268-8367
製造零件編號:: SQJQ936E-T1_GE3
製造商:: Vishay

Vishay SQJQ936E 4 Dual N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ936E-T1_GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 2000 件）*

TWD106,400.00

(不含稅)

TWD111,720.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年8月21日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2000 +	TWD53.20	TWD106,400.00

* 參考價格

RS庫存編號:: 268-8367
製造零件編號:: SQJQ936E-T1_GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Dual N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	100A
	Maximum Drain Source Voltage Vds	40V
	Package Type	PowerPAK (8x8L)
	Series	SQJQ936E
	Mount Type	PCB
	Pin Count	4
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	40 V
	Forward Voltage Vf	0V
	Maximum Operating Temperature	150°C
	Standards/Approvals	AEC-Q101, RoHS, 100 percent Rg and UIS tested
	Number of Elements per Chip	4
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Dual N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 100A
	Maximum Drain Source Voltage Vds 40V
	Package Type PowerPAK (8x8L)
	Series SQJQ936E
	Mount Type PCB
	Pin Count 4
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 40 V
	Forward Voltage Vf 0V
	Maximum Operating Temperature 150°C
	Standards/Approvals AEC-Q101, RoHS, 100 percent Rg and UIS tested
	Number of Elements per Chip 4
	Automotive Standard No

Datasheet - SQJQ936E-T1_GE3

COO (Country of Origin):: CN

The Vishay automotive dual N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device with single configuration MOSFET and It is independent of operating temperature.

AEC Q101 qualified

ROHS compliant

Vishay SQJQ936E 4 Dual N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin PowerPAK (8x8L) SQJQ936E-T1_GE3

訂單超過 $1,300.00 免費送貨

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