ROHM RF4P060BG Type N-Channel MOSFET, 6 A, 100 V Enhancement, 8-Pin HUML2020L8 RF4P060BGTCR
- RS庫存編號:
- 266-3857
- 製造零件編號:
- RF4P060BGTCR
- 製造商:
- ROHM
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可享批量折扣
查看批量定價選項小計（1 包，共 10 件）*
TWD257.00
(不含稅)
TWD269.80
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD25.70 | TWD257.00 |
| 50 - 90 | TWD25.30 | TWD253.00 |
| 100 - 240 | TWD19.70 | TWD197.00 |
| 250 - 990 | TWD19.50 | TWD195.00 |
| 1000 + | TWD18.50 | TWD185.00 |
* 參考價格
- RS庫存編號:
- 266-3857
- 製造零件編號:
- RF4P060BGTCR
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RF4P060BG | |
| Package Type | HUML2020L8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 53mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 6.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RF4P060BG | ||
Package Type HUML2020L8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 53mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 6.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power small mould package, suitable for switching.
Pb free plating
RoHS compliant
Halogen free
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