Microchip Type P-Channel MOSFET, 0.6 A, 40 V MOSFET, 3-Pin SOT-23
- RS庫存編號:
- 264-8930P
- 製造零件編號:
- TP2104K1-G
- 製造商:
- Microchip
可享批量折扣
查看批量定價選項小計（50 件, 按連續帶提供）*
TWD1,135.00
(不含稅)
TWD1,192.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 830 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 50 - 90 | TWD22.70 |
| 100 - 240 | TWD20.10 |
| 250 - 990 | TWD19.60 |
| 1000 + | TWD19.30 |
* 參考價格
- RS庫存編號:
- 264-8930P
- 製造零件編號:
- TP2104K1-G
- 製造商:
- Microchip
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Microchip | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.6A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-23 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | MOSFET | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Microchip | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.6A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-23 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode MOSFET | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
Free from secondary breakdown
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