Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23

RS庫存編號:: 264-8924
製造零件編號:: TN5335K1-G
製造商:: Microchip

Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD69,000.00

(不含稅)

TWD72,450.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年2月16日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD23.00	TWD69,000.00

* 參考價格

RS庫存編號:: 264-8924
製造零件編號:: TN5335K1-G
製造商:: Microchip

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	350V
	Series	TN5335
	Package Type	SOT-23
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	15Ω
	Channel Mode	MOSFET
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	1.8V
	Maximum Operating Temperature	150°C
	Length	2.9mm
	Width	1.3 mm
	Standards/Approvals	No
	Height	1.12mm
	Automotive Standard	No

	選取全部
	品牌 Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 350V
	Series TN5335
	Package Type SOT-23
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 15Ω
	Channel Mode MOSFET
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf 1.8V
	Maximum Operating Temperature 150°C
	Length 2.9mm
	Width 1.3 mm
	Standards/Approvals No
	Height 1.12mm
	Automotive Standard No

Datasheet - TN5335K1-G

The Microchip N-Channel low threshold enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip TN5335 Type N-Channel MOSFET, 230 mA, 350 V MOSFET, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

相關連結