STMicroelectronics N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel

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包裝方式:
RS庫存編號:
261-5043P
製造零件編號:
SCT055HU65G3AG
製造商:
STMicroelectronics
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品牌

STMicroelectronics

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

Tape & Reel

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22V

Typical Gate Charge Qg @ Vgs

29nC

Maximum Operating Temperature

150°C

Height

3.5mm

Standards/Approvals

No

Width

14mm

Length

18.58mm

Automotive Standard

No

COO (Country of Origin):
MA

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package


The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

AEC-Q101 qualified

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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