Infineon HEXFET Type N-Channel MOSFET, 382 A, 24 V, 3-Pin TO-262 AUIRF1324WL
- RS庫存編號:
- 260-5055
- 製造零件編號:
- AUIRF1324WL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD303.00
(不含稅)
TWD318.15
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 998 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 9 | TWD303.00 |
| 10 - 24 | TWD295.00 |
| 25 - 99 | TWD284.00 |
| 100 - 499 | TWD272.00 |
| 500 + | TWD259.00 |
* 參考價格
- RS庫存編號:
- 260-5055
- 製造零件編號:
- AUIRF1324WL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 382A | |
| Maximum Drain Source Voltage Vds | 24V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.65mm | |
| Height | 4.83mm | |
| Width | 10.67 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 382A | ||
Maximum Drain Source Voltage Vds 24V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Operating Temperature 175°C | ||
Length 9.65mm | ||
Height 4.83mm | ||
Width 10.67 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Widelead HEXFET Power MOSFET is specifically design for automotive applications. It features175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
Advanced process technology
Ultra low on resistance
Fast switching
Repetitive avalanche allowed up to Tjmax
相關連結
- Infineon HEXFET Type N-Channel MOSFET 24 V, 3-Pin TO-262
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-262
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-262
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-262
- Infineon HEXFET Type N-Channel MOSFET 40 V TO-262 IRF2804STRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V TO-262 IRFZ44NSTRLPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V TO-262 IRFS4127TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 55 V, 3-Pin TO-262 IRF3205ZLPBF