製造零件編號

Infineon MOSFET, 50 A, 2000 V AG-EASY3B DF419MR20W3M1HFB11BPSA1

RS庫存編號:: 260-1093
製造零件編號:: DF419MR20W3M1HFB11BPSA1
製造商:: Infineon

Infineon MOSFET, 50 A, 2000 V AG-EASY3B DF419MR20W3M1HFB11BPSA1

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 件）*

TWD9,511.00

(不含稅)

TWD9,986.55

訂單超過 $1,300.00 免費送貨

有庫存

加上 8 件從 2026年1月05日起發貨

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單位	每單位
1 - 1	TWD9,511.00
2 +	TWD9,321.00

* 參考價格

RS庫存編號:: 260-1093
製造零件編號:: DF419MR20W3M1HFB11BPSA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	2000V
	Package Type	AG-EASY3B
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	26.5mΩ
	Forward Voltage Vf	6.15V
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 2000V
	Package Type AG-EASY3B
	Mount Type Surface
	Maximum Drain Source Resistance Rds 26.5mΩ
	Forward Voltage Vf 6.15V
	Standards/Approvals No
	Automotive Standard No

Datasheet - DF419MR20W3M1HFB11BPSA1

The Infineon MOSFET features a 4-leg boost configuration in one Easy 3B housing and comes with the latest CoolSiC M1H generation. The 2000 V SiC MOSFET shares the same performance and benefits as the 1200 V M1H series incl. 12% lower RDS(on) at 125° C, wider gate source voltage area for higher flexibility, a maximum junction temperature of 175° C and smaller chip sizes.

High current density

Low inductive design

Rugged mounting due to integrated mounting clamps

Infineon MOSFET, 50 A, 2000 V AG-EASY3B DF419MR20W3M1HFB11BPSA1

訂單超過 $1,300.00 免費送貨

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