Infineon iPB Type N-Channel MOSFET, 162 A, 100 V P TO-263 IPB026N10NF2SATMA1

可享批量折扣

小計(1 件)*

TWD140.00

(不含稅)

TWD147.00

(含稅)

Add to Basket
選擇或輸入數量
有庫存
  • 加上 773 件從 2026年2月23日 起發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位
每單位
1 - 9TWD140.00
10 - 99TWD126.00
100 - 249TWD113.00
250 - 499TWD103.00
500 +TWD93.00

* 參考價格

包裝方式:
RS庫存編號:
259-2581
製造零件編號:
IPB026N10NF2SATMA1
製造商:
Infineon
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

162A

Maximum Drain Source Voltage Vds

100V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Channel Mode

P

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon StrongIRFET 2 power MOSFETs are optimized for a broad range of applications like SMPS, motor drive, battery powered, battery management, UPS, and light electric vehicles. This new technology offers up to 40 percent RDS(on) improvement and up to 60 percent lower Qg compared to the previous StrongIRFET devices, translating into higher power efficiency for improved overall system performance. Increased current ratings allow for higher current carrying capability, eliminating the need to parallel multiple devices translating to lower BOM costs and board savings.

Broad availability from distribution partners

Excellent price/performance ratio

Ideal for high and low switching frequencies

Industry standard footprint through-hole package

High current rating

相關連結