Infineon BSZ Type P-Channel MOSFET, 39.5 A, 30 V P, 8-Pin TSDSON BSZ180P03NS3EGATMA1
- RS庫存編號:
- 259-1486
- 製造零件編號:
- BSZ180P03NS3EGATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 10 件)*
TWD111.00
(不含稅)
TWD116.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 4,000 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD11.10 | TWD111.00 |
| 50 - 490 | TWD10.60 | TWD106.00 |
| 500 - 990 | TWD9.90 | TWD99.00 |
| 1000 - 2490 | TWD9.20 | TWD92.00 |
| 2500 + | TWD8.60 | TWD86.00 |
* 參考價格
- RS庫存編號:
- 259-1486
- 製造零件編號:
- BSZ180P03NS3EGATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 39.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 18Ω | |
| Channel Mode | P | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 39.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 18Ω | ||
Channel Mode P | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon highly innovative optimos families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Enhancement mode
Normal level, logic level or super logic level
Avalanche rated
Pb-free lead plating RoHS compliant
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