Infineon HEXFET Type P-Channel MOSFET, -13 A, -150 V TO-252 IRFR6215TRLPBF
- RS庫存編號:
- 258-3986
- 製造零件編號:
- IRFR6215TRLPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD140.00
(不含稅)
TWD147.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,465 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD28.00 | TWD140.00 |
| 10 - 95 | TWD26.60 | TWD133.00 |
| 100 - 245 | TWD25.00 | TWD125.00 |
| 250 - 495 | TWD23.20 | TWD116.00 |
| 500 + | TWD21.20 | TWD106.00 |
* 參考價格
- RS庫存編號:
- 258-3986
- 製造零件編號:
- IRFR6215TRLPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -13A | |
| Maximum Drain Source Voltage Vds | -150V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -13A | ||
Maximum Drain Source Voltage Vds -150V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
increased ruggedness
Wide availability from distribution partners
Industry standard qualification level
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