Infineon IPW MOSFET, 63 A TO-247
- RS Stock No.:
- 258-3912
- Mfr. Part No.:
- IPW65R035CFD7AXKSA1
- Brand:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
TWD6,747.00
(exc. VAT)
TWD7,084.20
(inc. VAT)
添加 30 units 件可免費送貨
有庫存
- 210 件準備從其他地點送貨
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | TWD224.90 | TWD6,747.00 |
| 60 - 60 | TWD218.10 | TWD6,543.00 |
| 90 + | TWD211.60 | TWD6,348.00 |
*price indicative
- RS Stock No.:
- 258-3912
- Mfr. Part No.:
- IPW65R035CFD7AXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Package Type | TO-247 | |
| Series | IPW | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Package Type TO-247 | ||
Series IPW | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS CFD7ASJ power device is latest generation of market leading automotive qualified high voltage CoolMOS MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFD7A series provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase-shift full-bridge and LLC.
Battery voltages up to 475V without compromising on reliability standards
Efficiency improvements in hard- and soft-switching topologies up to 98.4%
Intrinsic fast body diode with 30% lower Qrr compared to CoolMOS CFDA
Highest reliability in the field meeting automotive lifetime requirements
Enabling of higher power density designs
Related links
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