Infineon IPW Type N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247
- RS庫存編號:
- 258-3906
- 製造零件編號:
- IPW60R099C7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 30 件）*
TWD2,646.00
(不含稅)
TWD2,778.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 120 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 30 - 30 | TWD88.20 | TWD2,646.00 |
| 60 - 60 | TWD85.60 | TWD2,568.00 |
| 90 + | TWD83.00 | TWD2,490.00 |
* 參考價格
- RS庫存編號:
- 258-3906
- 製造零件編號:
- IPW60R099C7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | IPW | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series IPW | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS C7 super junction MOSFET series offers a ∼50% reduction in turn-off losses compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The MOSFET is also a perfect match for high-power-density charger designs. Efficiency and TCO applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Increased switching frequency
Best R (on)A in the world
Rugged body diode
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
相關連結
- Infineon IPW Type N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R099C7XKSA1
- Infineon IPW Type N-Channel MOSFET 600 V, 3-Pin TO-247
- Infineon IPW Type N-Channel MOSFET 600 V, 3-Pin TO-247 IPW60R125P6XKSA1
- Infineon IPW Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1
- Infineon IPW Type N-Channel MOSFET 900 V TO-247
- Infineon IPW Type N-Channel MOSFET 900 V TO-247 IPW90R120C3XKSA1
- Infineon IPW Type N-Channel MOSFET 75 V, 3-Pin TO-247
- Infineon IPW Type N-Channel MOSFET 950 V, 3-Pin TO-247