Infineon IPP Type N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220
- RS庫存編號:
- 258-3898
- 製造零件編號:
- IPP65R095C7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD4,265.00
(不含稅)
TWD4,478.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 2,000 件從 2026年2月16日 起裝運發貨
- 加上 500 件從 2026年3月16日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD85.30 | TWD4,265.00 |
| 100 - 100 | TWD83.60 | TWD4,180.00 |
| 150 + | TWD81.90 | TWD4,095.00 |
* 參考價格
- RS庫存編號:
- 258-3898
- 製造零件編號:
- IPP65R095C7XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 128W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPP | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 128W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolMOS is are volutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits offset switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Lowest conduction losses/package
Low switching losses
Better light load efficiency
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