Infineon IPP Type N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220
- RS庫存編號:
- 258-3898
- 製造零件編號:
- IPP65R095C7XKSA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 管,共 50 件)*
TWD5,335.00
(不含稅)
TWD5,602.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD106.70 | TWD5,335.00 |
| 100 - 100 | TWD104.60 | TWD5,230.00 |
| 150 + | TWD101.50 | TWD5,075.00 |
* 參考價格
- RS庫存編號:
- 258-3898
- 製造零件編號:
- IPP65R095C7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 128W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPP | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 128W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolMOS is are volutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits offset switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Lowest conduction losses/package
Low switching losses
Better light load efficiency
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