Infineon iPB N-Channel MOSFET, 120 A, 100 V N, 3-Pin TO-263 IPB020N10N5LFATMA1
- RS庫存編號:
- 258-3785
- 製造零件編號:
- IPB020N10N5LFATMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 卷，共 1000 件）*
TWD121,700.00
(不含稅)
TWD127,780.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 1,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD121.70 | TWD121,700.00 |
| 2000 + | TWD119.30 | TWD119,300.00 |
* 參考價格
- RS庫存編號:
- 258-3785
- 製造零件編號:
- IPB020N10N5LFATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 195nC | |
| Maximum Power Dissipation Pd | 313W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 890mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 195nC | ||
Maximum Power Dissipation Pd 313W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 890mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
Infineon iPB Series MOSFET, 100V Maximum Drain-Source Voltage, 120A Maximum Continuous Drain Current - IPB020N10N5LFATMA1
This MOSFET is a high-current N-channel power transistor designed for surface-mounted power switching in demanding thermal environments. It operates across a wide ambient range and provides strong conduction performance for applications requiring substantial continuous drain current and moderate gate-drive energy.
Features and Benefits:
• Low on-resistance reduces conduction losses for high-current operation
• High power dissipation enables sustained load handling at elevated dissipation
• Robust drain-source voltage rating allows safe switching up to 100V
• Large continuous drain current capacity supports heavy-current systems
• Moderate gate charge balances switching speed and gate-drive demands
• High power dissipation enables sustained load handling at elevated dissipation
• Robust drain-source voltage rating allows safe switching up to 100V
• Large continuous drain current capacity supports heavy-current systems
• Moderate gate charge balances switching speed and gate-drive demands
Applications
• Suitable for high-current DC power distribution blocks
• Ideal for switch-mode power supplies in Compact systems
• Used with motor drivers requiring 100V tolerances
• Can be used for server and telecoms power stages
• Suitable for industrial converters operating at elevated temperatures
• Ideal for switch-mode power supplies in Compact systems
• Used with motor drivers requiring 100V tolerances
• Can be used for server and telecoms power stages
• Suitable for industrial converters operating at elevated temperatures
What ambient temperatures can it tolerate?
It functions over a broad range from -55°C to 150°C, supporting both cold-start and high-temperature operation.
How is it packaged for PCB assembly?
It is supplied in a TO-263 surface-mount package intended for board-mounted power installations.
What gate-drive considerations apply for switching performance?
The typical total gate charge is 195 nC, which informs gate-driver current and switching timing requirements.
What safety limits govern gate-to-source excursions?
The maximum permissible gate-source voltage is 20V and should not be exceeded to avoid device stress.
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