Infineon IPA Type N-Channel MOSFET, 26 A, 650 V N TO-220
- RS庫存編號:
- 258-3781
- 製造零件編號:
- IPAN60R360PFD7SXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD1,320.00
(不含稅)
TWD1,386.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 300 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD26.40 | TWD1,320.00 |
| 100 - 100 | TWD23.80 | TWD1,190.00 |
| 150 + | TWD23.10 | TWD1,155.00 |
* 參考價格
- RS庫存編號:
- 258-3781
- 製造零件編號:
- IPAN60R360PFD7SXKSA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPA | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPA | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a TO-220 FullPAK NL package achieves low switching losses, featuring RDS(on) of 360mOhm. The 600V CoolMOS PFD7 comes with an integrated fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
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