Infineon IPA Type N-Channel MOSFET, 66 A, 650 V N TO-220 IPAN60R125PFD7SXKSA1
- RS庫存編號:
- 258-3780
- 製造零件編號:
- IPAN60R125PFD7SXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD180.00
(不含稅)
TWD189.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年5月27日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD90.00 | TWD180.00 |
| 10 - 18 | TWD85.50 | TWD171.00 |
| 20 - 28 | TWD80.50 | TWD161.00 |
| 30 - 38 | TWD75.00 | TWD150.00 |
| 40 + | TWD68.50 | TWD137.00 |
* 參考價格
- RS庫存編號:
- 258-3780
- 製造零件編號:
- IPAN60R125PFD7SXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPA | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPA | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The MOSFET in a TO-220 FullPAK narrow-lead package features RDS(on) of 125mOhm leading to low switching losses. The products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600V CoolMOS PFD7 offers improved light- and full-load efficiency over CoolMOS P7 and CE MOSFET technologies resulting in an increase in power density by 1.8W/inch3.
Wide range of RDS(on) values
Excellent commutation ruggedness
Low EMI
Broad package portfolio
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
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