Infineon BSZ Type N-Channel MOSFET, 104 A, 60 V N, 8-Pin TSDSON
- RS庫存編號:
- 258-0711
- 製造零件編號:
- BSZ037N06LS5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 5000 件）*
TWD102,500.00
(不含稅)
TWD107,600.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年6月15日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD20.50 | TWD102,500.00 |
| 10000 + | TWD19.90 | TWD99,500.00 |
* 參考價格
- RS庫存編號:
- 258-0711
- 製造零件編號:
- BSZ037N06LS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Forward Voltage Vf | 0.8V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 69W | ||
Forward Voltage Vf 0.8V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V power MOSFET comprises a perfect fit for optimized efficiency and power density solutions such as synchronous rectification in switched mode power supplies, for telecom bricks and server applications, as well as portable chargers. The small footprint of only 3.3x3.3mm2 combined with outstanding electrical performance further contributes towards best-in-class power density and form factor improvement in the end application.
Monolithically integrated Schottky-like diode
Ultra low charges
Ideal for high performance applications
RoHS compliant - halogen free
Less paralleling required
Very low voltage overshoot
Reduced need for snubber circuit
相關連結
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