Infineon BSZ N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1
- RS庫存編號:
- 258-0709
- 製造零件編號:
- BSZ018N04LS6ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD132,500.00
(不含稅)
TWD139,100.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年10月21日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD26.50 | TWD132,500.00 |
| 10000 + | TWD25.10 | TWD125,500.00 |
* 參考價格
- RS庫存編號:
- 258-0709
- 製造零件編號:
- BSZ018N04LS6ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TSDSON | |
| Series | BSZ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 780mV | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TSDSON | ||
Series BSZ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 780mV | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
Infineon BSZ Series MOSFET, 40V Maximum Drain-Source Voltage, 158A Maximum Continuous Drain Current - BSZ018N04LS6ATMA1
This MOSFET is a surface-mount N-channel transistor designed for high-current switching in Compact power stages. It delivers significant continuous drain capability and is suited to thermal environments across a broad range. The device meets RoHS requirements and is supplied in an 8‑pin TSDSON package for low-profile board assemblies.
Features and Benefits:
• Very low Rds(on) 2.7mΩ enables reduced conduction losses
• High power dissipation 83W allows sustained thermal loading
• Typical gate charge 31 nC supports efficient switching control
• Low forward voltage 0.78V reduces on-state voltage drop
• Wide operating range -55°C to 175°C suits harsh conditions
• High power dissipation 83W allows sustained thermal loading
• Typical gate charge 31 nC supports efficient switching control
• Low forward voltage 0.78V reduces on-state voltage drop
• Wide operating range -55°C to 175°C suits harsh conditions
Applications
• Suitable for 40V 158A power stages in DC-DC converters
• Ideal for high-current SMD MOSFET roles in power supplies
• Used with surface-mount layouts requiring a TSDSON 8‑pin footprint
• Can be used for switching in Compact high-power modules
• Ideal for high-current SMD MOSFET roles in power supplies
• Used with surface-mount layouts requiring a TSDSON 8‑pin footprint
• Can be used for switching in Compact high-power modules
What package and pin count does it use?
It is supplied in a TSDSON package with eight pins.
What gate-handling limits must designers observe?
The device accepts up to 20V between gate and source.
How does it perform under varying temperatures?
It operates across a range from -55°C up to 175°C.
Is this device suitable for automotive standards?
It is not specified as meeting automotive-grade standards.
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