Infineon BSZ Type N-Channel MOSFET, 158 A, 40 V N, 8-Pin TSDSON BSZ018N04LS6ATMA1
- RS庫存編號:
- 258-0710
- 製造零件編號:
- BSZ018N04LS6ATMA1
- 製造商:
- Infineon
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TWD96.00
(不含稅)
TWD100.80
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 3,730 件從 2026年6月08日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD48.00 | TWD96.00 |
| 10 - 98 | TWD46.50 | TWD93.00 |
| 100 - 248 | TWD42.50 | TWD85.00 |
| 250 - 498 | TWD39.50 | TWD79.00 |
| 500 + | TWD36.50 | TWD73.00 |
* 參考價格
- RS庫存編號:
- 258-0710
- 製造零件編號:
- BSZ018N04LS6ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 158A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSZ | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 0.78V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 158A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSZ | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 0.78V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 6 power MOSFET 40V family is optimized for a variety of applications and circuits, such as synchronous rectification in switched mode power supplies in servers, desktop PCs, wireless chargers, quick chargers and ORing circuits. Improvements in on-state resistance enable designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Highest system efficiency
Less paralleling required
Increased power density
Very low voltage overshoot
相關連結
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