Infineon OptiMOS Type N-Channel MOSFET, 257 A, 60 V, 8-Pin TDSON
- RS庫存編號:
- 258-0680
- 製造零件編號:
- BSC014N06NSTATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 5000 件)*
TWD297,500.00
(不含稅)
TWD312,400.00
(含稅)
添加 5000 件 件可免費送貨
暫時缺貨
- 從 2026年6月15日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD59.50 | TWD297,500.00 |
| 10000 + | TWD57.70 | TWD288,500.00 |
* 參考價格
- RS庫存編號:
- 258-0680
- 製造零件編號:
- BSC014N06NSTATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 257A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.45mΩ | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 89nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 257A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.45mΩ | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 89nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 power MOSFET in SuperSO8 package offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower rated devices, the 175°C TJ_MAX feature offers either more power at a higher operating junction temperature or longer lifetime at the same operating junction temperature. Furthermore, 20% improvement in the safe operating area is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and server.
Low RDS(on)
Optimized for synchronous rectification
Longer life time
Highest efficiency and power density
Highest system reliability
Thermal robustness
相關連結
- Infineon OptiMOS Type N-Channel MOSFET 60 V, 8-Pin TDSON BSC014N06NSTATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V TDSON BSC014N06NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON BSC097N06NSATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TDSON
