Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8

小計(1 卷,共 4000 件)*

TWD83,600.00

(不含稅)

TWD87,760.00

(含稅)

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  • 2026年5月25日 發貨
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4000 +TWD20.90TWD83,600.00

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RS庫存編號:
257-9319
製造零件編號:
IRF7820TRPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.7A

Maximum Drain Source Voltage Vds

200V

Package Type

SO-8

Series

HEXFET

Pin Count

8

Maximum Drain Source Resistance Rds

78mΩ

Typical Gate Charge Qg @ Vgs

29nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

330mm

Automotive Standard

No

The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level is Optimized for 10 V gate drive voltage

Industry standard surface mount package

Capable of being wave soldered

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