製造零件編號

Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8

RS庫存編號:: 257-9319
製造零件編號:: IRF7820TRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 4000 件）*

TWD83,600.00

(不含稅)

TWD87,760.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月24日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
4000 +	TWD20.90	TWD83,600.00

* 參考價格

RS庫存編號:: 257-9319
製造零件編號:: IRF7820TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.7A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	SO-8
	Pin Count	8
	Maximum Drain Source Resistance Rds	78mΩ
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Typical Gate Charge Qg @ Vgs	29nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	150°C
	Height	330mm
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.7A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type SO-8
	Pin Count 8
	Maximum Drain Source Resistance Rds 78mΩ
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Typical Gate Charge Qg @ Vgs 29nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 150°C
	Height 330mm
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7820TRPBF

The Infineon IRF series is the 200V single n channel HEXFET power mosfet in a SO 8 package.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Normal level is Optimized for 10 V gate drive voltage

Industry standard surface mount package

Capable of being wave soldered

Infineon HEXFET Type N-Channel MOSFET, 3.7 A, 200 V, 8-Pin SO-8

訂單超過 $1,300.00 免費送貨

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