Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET

RS庫存編號:: 257-9313
製造零件編號:: IRF7480MTRPBF
製造商:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 4800 件）*

TWD170,400.00

(不含稅)

TWD178,944.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年4月13日發貨

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單位	每單位	每卷*
4800 +	TWD35.50	TWD170,400.00

* 參考價格

RS庫存編號:: 257-9313
製造零件編號:: IRF7480MTRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	217A
	Maximum Drain Source Voltage Vds	40V
	Package Type	DirectFET
	Series	HEXFET
	Mount Type	Surface
	Maximum Drain Source Resistance Rds	1.2mΩ
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	96W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	123nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 217A
	Maximum Drain Source Voltage Vds 40V
	Package Type DirectFET
	Series HEXFET
	Mount Type Surface
	Maximum Drain Source Resistance Rds 1.2mΩ
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 96W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 123nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IRF7480MTRPBF

The Infineon IRF series is the 40V single n channel strong IRFET power mosfet in a direct FET ME package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

Dual side cooling capability

Low package height of 0.7mm

Low parasitic (1 to 2 nH) inductance package

100 percent lead free (No ROHS exemption)

Silicon optimized for applications switching below 100 kHz

Product qualification according to JEDEC standard

Infineon HEXFET Type N-Channel MOSFET, 217 A, 40 V DirectFET

訂單超過 $1,300.00 免費送貨

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