Infineon HEXFET Type N-Channel MOSFET, 76 A, 200 V TO-220 IRFB4127PBF
- RS庫存編號:
- 257-5807
- 製造零件編號:
- IRFB4127PBF
- 製造商:
- Infineon
N
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小計（1 包，共 2 件）*
TWD161.00
(不含稅)
TWD169.04
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD80.50 | TWD161.00 |
| 10 - 18 | TWD72.00 | TWD144.00 |
| 20 - 48 | TWD70.50 | TWD141.00 |
| 50 - 98 | TWD69.50 | TWD139.00 |
| 100 + | TWD59.50 | TWD119.00 |
* 參考價格
- RS庫存編號:
- 257-5807
- 製造零件編號:
- IRFB4127PBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | PCB | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type PCB | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Industry standard through-hole power package
High-current rating
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100 kHz
Softer body-diode compared to previous silicon generation
Wide portfolio available
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