Vishay E Type N-Channel Power MOSFET, 15 A, 600 V, 3-Pin TO-263 SIHB15N60E-GE3
- RS庫存編號:
- 256-7411
- 製造零件編號:
- SIHB15N60E-GE3
- 製造商:
- Vishay
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- RS庫存編號:
- 256-7411
- 製造零件編號:
- SIHB15N60E-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.28Ω | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Power Dissipation Pd | 180W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.28Ω | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Power Dissipation Pd 180W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay Series E Power MOSFET, 600V Maximum Drain Source Voltage, 15A Maximum Continuous Drain Current - SIHB15N60E-GE3
This power MOSFET is a high-voltage switching device designed for surface-mount power electronics. It provides N‑channel conduction suitable for switching and power-management roles in industrial and commercial assemblies, operating across a broad ambient temperature range for demanding environments.
Features and Benefits:
• 600V drain rating enables high-voltage switching
• 15A continuous drain current supports substantial load currents
• Rds(on) 0.28Ω minimises conduction losses under load
• 180W power dissipation handles elevated thermal stress
• Gate charge 78nC at 30V Vgs allows predictable drive requirements
• TO‑263 surface package simplifies PCB assembly for power stages
• 15A continuous drain current supports substantial load currents
• Rds(on) 0.28Ω minimises conduction losses under load
• 180W power dissipation handles elevated thermal stress
• Gate charge 78nC at 30V Vgs allows predictable drive requirements
• TO‑263 surface package simplifies PCB assembly for power stages
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for motor-drive front-end switching stages
• Used for lighting ballast and industrial controls
• Can be used for power conversion in renewable inverters
• Used with thermal-management boards for high-power modules
• Ideal for motor-drive front-end switching stages
• Used for lighting ballast and industrial controls
• Can be used for power conversion in renewable inverters
• Used with thermal-management boards for high-power modules
What gate-drive voltage range should be observed?
The device tolerates gate voltages up to 30V, so drive circuits must remain within this limit to prevent gate overstress.
How does the thermal environment affect reliability?
Junctions can operate in environments from -55°C to +150°C, requiring proper heat-sinking or PCB copper for sustained high-power use.
What package considerations are there for PCB design?
The TO‑263 3‑pin surface-mount outline demands large thermal pads and short high-current tracks to reduce parasitic resistance and improve cooling.
Is this suitable for automotive powertrain applications?
It is not classified to automotive standards, so it should not be used where automotive-specific qualifications are required.
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