Vishay E Type N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-263 SIHB053N60E-GE3
- RS庫存編號:
- 225-9910
- 製造零件編號:
- SIHB053N60E-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD407.00
(不含稅)
TWD427.36
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 746 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD203.50 | TWD407.00 |
| 10 - 18 | TWD198.50 | TWD397.00 |
| 20 - 24 | TWD193.50 | TWD387.00 |
| 26 - 48 | TWD188.50 | TWD377.00 |
| 50 + | TWD184.50 | TWD369.00 |
* 參考價格
- RS庫存編號:
- 225-9910
- 製造零件編號:
- SIHB053N60E-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | E | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Power Dissipation Pd | 278W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Width | 9.65 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series E | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Power Dissipation Pd 278W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 15.88mm | ||
Width 9.65 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Siliconix maintains Reliability data for Semiconductor Technology and Package Reliability represent a composite of all qualified locations.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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