Vishay IRFU310 Type N-Channel Power MOSFET, 1.7 A, 400 V, 3-Pin IPAK IRFU310PBF
- RS庫存編號:
- 256-7321
- 製造零件編號:
- IRFU310PBF
- 製造商:
- Vishay
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計(1 包,共 5 件)*
TWD380.00
(不含稅)
TWD399.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,975 件準備從其他地點送貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD76.00 | TWD380.00 |
| 50 - 95 | TWD72.40 | TWD362.00 |
| 100 - 245 | TWD67.80 | TWD339.00 |
| 250 - 995 | TWD63.40 | TWD317.00 |
| 1000 + | TWD58.00 | TWD290.00 |
* 參考價格
- RS庫存編號:
- 256-7321
- 製造零件編號:
- IRFU310PBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Maximum Drain Source Voltage Vds | 400V | |
| Package Type | IPAK | |
| Series | IRFU310 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.6Ω | |
| Maximum Power Dissipation Pd | 25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 1.7A | ||
Maximum Drain Source Voltage Vds 400V | ||
Package Type IPAK | ||
Series IRFU310 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.6Ω | ||
Maximum Power Dissipation Pd 25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay IRFU310 Series Power MOSFET, 400V Drain Source Voltage, 1.7A Continuous Drain Current - IRFU310PBF
This power MOSFET is a high-voltage switching transistor designed for surface-mount applications where rugged thermal tolerance and controlled gate behaviour are required. It operates across a wide temperature span and is suitable for power conversion and high-voltage switching circuits that demand modest continuous current and conservative on-resistance.
Features and Benefits:
• 400V drain-to-source capability supports high-voltage applications
• 3.6Ω Rds on reduces conduction loss in low-current designs
• 25W power dissipation enables sustained thermal loading
• 1.7A continuous drain current suits moderate load requirements
• 12nC typical gate charge provides faster switching with lower drive
• 20V maximum gate-source voltage allows flexible gate drive choices
• 3.6Ω Rds on reduces conduction loss in low-current designs
• 25W power dissipation enables sustained thermal loading
• 1.7A continuous drain current suits moderate load requirements
• 12nC typical gate charge provides faster switching with lower drive
• 20V maximum gate-source voltage allows flexible gate drive choices
Applications
• Suitable for high-voltage switch-mode power supplies
• Ideal for motor control in low-current systems
• Used for lighting ballasts and LED driver stages
• Can be used for intermediate power converters
• Used with thermal management for compact power modules
• Ideal for motor control in low-current systems
• Used for lighting ballasts and LED driver stages
• Can be used for intermediate power converters
• Used with thermal management for compact power modules
What mounting arrangement does it require on a board?
It is supplied in an IPAK-style surface-mount package that facilitates soldered attachment to a PCB and supports thermal transfer through the package body.
How does it tolerate extreme ambient temperatures during operation?
The device is rated to function down to -55°C and up to +150°C, allowing use in environments with wide temperature fluctuations.
What gate drive limitation must designers observe?
Gate voltage must not exceed 20V to avoid overstressing the gate oxide
designers should provide appropriate gate‑drive clamping or level shifting.
Are there any environmental or materials restrictions relevant to procurement?
The component meets RoHS requirements, indicating restricted use of certain hazardous substances in its manufacture.
相關連結
- Vishay Type N-Channel MOSFET 400 V, 3-Pin IPAK
- Vishay Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252
- Vishay Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252 IRFR310TRPBF
- Vishay N-Channel MOSFET 200 V, 3-Pin IPAK IRFU210PBF
- Vishay Type N-Channel MOSFET 60 V, 3-Pin IPAK
- Vishay Type N-Channel MOSFET 60 V, 3-Pin IPAK
- Vishay Type N-Channel MOSFET 60 V, 3-Pin IPAK IRFU014PBF
- Vishay Type N-Channel MOSFET 60 V, 3-Pin IPAK IRFU024PBF
