DiodesZetex DMN2040U Type N-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 DMN2055UQ-7
- RS庫存編號:
- 254-8602
- 製造零件編號:
- DMN2055UQ-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD262.50
(不含稅)
TWD275.50
(含稅)
訂單超過 $1,300.00 免費送貨
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- 2,900 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD10.50 | TWD262.50 |
| 50 - 75 | TWD10.00 | TWD250.00 |
| 100 - 225 | TWD9.40 | TWD235.00 |
| 250 - 975 | TWD8.70 | TWD217.50 |
| 1000 + | TWD8.00 | TWD200.00 |
* 參考價格
- RS庫存編號:
- 254-8602
- 製造零件編號:
- DMN2055UQ-7
- 製造商:
- DiodesZetex
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMN2040U | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Power Dissipation Pd | 1.36W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMN2040U | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Power Dissipation Pd 1.36W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in general purpose interfacing sw
Low on resistance
Low input capacitance
ESD protected gate
Halogen and antimony Free
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