Texas Instruments Type N-Channel MOSFET, 200 A, 100 V Enhancement TO-263 CSD19532KTT
- RS庫存編號:
- 252-8488
- 製造零件編號:
- CSD19532KTT
- 製造商:
- Texas Instruments
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD570.00
(不含稅)
TWD598.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 890 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 20 | TWD114.00 | TWD570.00 |
| 25 - 45 | TWD96.20 | TWD481.00 |
| 50 - 95 | TWD94.40 | TWD472.00 |
| 100 - 245 | TWD82.20 | TWD411.00 |
| 250 + | TWD80.40 | TWD402.00 |
* 參考價格
- RS庫存編號:
- 252-8488
- 製造零件編號:
- CSD19532KTT
- 製造商:
- Texas Instruments
規格
法例與合規
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Texas Instruments | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 200A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 12.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.9W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Texas Instruments | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 200A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 12.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.9W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
相關連結
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