Infineon ISP Type P-Channel MOSFET, -2.8 A, 40 V Enhancement, 3-Pin SOT-223 ISP25DP06LMSATMA1
- RS庫存編號:
- 250-0566
- 製造零件編號:
- ISP25DP06LMSATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD41.00
(不含稅)
TWD43.05
(含稅)
添加 200 件 件可免費送貨
最後的 RS 庫存
- 最終 2,930 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD8.20 | TWD41.00 |
| 10 - 95 | TWD7.40 | TWD37.00 |
| 100 - 245 | TWD6.60 | TWD33.00 |
| 250 - 495 | TWD6.20 | TWD31.00 |
| 500 + | TWD6.00 | TWD30.00 |
* 參考價格
- RS庫存編號:
- 250-0566
- 製造零件編號:
- ISP25DP06LMSATMA1
- 製造商:
- Infineon
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -2.8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -2.8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS™ P-channel small signal MOSFETs 60V in SOT-223 package is the new technology targeted for consumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications.
Easy interface to MCU
Fast switching
Avalanche ruggedness
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