Infineon BSV Type P-Channel MOSFET, -1.5 A, 40 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- RS庫存編號:
- 250-0562
- 製造零件編號:
- BSV236SPH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD75.00
(不含稅)
TWD78.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,340 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD7.50 | TWD75.00 |
| 20 - 90 | TWD6.80 | TWD68.00 |
| 100 - 240 | TWD6.10 | TWD61.00 |
| 250 - 490 | TWD5.50 | TWD55.00 |
| 500 + | TWD5.00 | TWD50.00 |
* 參考價格
- RS庫存編號:
- 250-0562
- 製造零件編號:
- BSV236SPH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -1.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-363 | |
| Series | BSV | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -1.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-363 | ||
Series BSV | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOS-P is a Small-Signal-Transistor which is P-channel in Enhancement mode. The Super Logic Level (2.5 V rated). It is Avalanche rated and dv/dt rated.
VDS is 20 V, Rds(on) is 175 mΩ and Id is 1.5 A
150°C operating temperature
Maximum power dissipation is 560mW
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