Infineon BSD Type P-Channel MOSFET, -0.39 A, 40 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1
- RS庫存編號:
- 250-0521
- 製造零件編號:
- BSD223PH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD54.00
(不含稅)
TWD56.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,740 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD5.40 | TWD54.00 |
| 20 - 90 | TWD4.80 | TWD48.00 |
| 100 - 240 | TWD4.30 | TWD43.00 |
| 250 - 490 | TWD3.90 | TWD39.00 |
| 500 + | TWD3.30 | TWD33.00 |
* 參考價格
- RS庫存編號:
- 250-0521
- 製造零件編號:
- BSD223PH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -0.39A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-363 | |
| Series | BSD | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -0.39A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-363 | ||
Series BSD | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon highly innovative OptiMOS™ families include enhancement mode mosfet with Super logic level. It is avalanche and dv/dt rated. It offers fast switching. The device is Pb-free and Halogen-free. The Vds is -20 V, Rds(on) is 1.2 Ω while the Id is -0.39 A.
Consistently meet the highest quality and performance demands
Great on-state resistance and figure of merit characteristics
相關連結
- Infineon BSD Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363
- Infineon BSD Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363
- Infineon BSD Type N-Channel MOSFET 30 V Enhancement, 6-Pin SOT-363 BSD316SNH6327XTSA1
- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363
- Infineon BSV Type P-Channel MOSFET 40 V Enhancement, 6-Pin SOT-363 BSV236SPH6327XTSA1
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363
- Infineon BSD235C 2 Type N 0.95 A 6-Pin SOT-363 BSD235CH6327XTSA1
- ROHM UM6J1N Type P-Channel MOSFET Enhancement, 6-Pin SOT-363 UM6J1NTN