Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1
- RS庫存編號:
- 250-0542
- 製造零件編號:
- BSS138WH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD34.00
(不含稅)
TWD35.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 9,320 件從 2026年1月05日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 10 | TWD3.40 | TWD34.00 |
| 20 - 90 | TWD3.10 | TWD31.00 |
| 100 - 240 | TWD2.80 | TWD28.00 |
| 250 - 490 | TWD2.50 | TWD25.00 |
| 500 + | TWD2.30 | TWD23.00 |
* 參考價格
- RS庫存編號:
- 250-0542
- 製造零件編號:
- BSS138WH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 0.28A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSS | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 0.28A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSS | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes SIPMOS Small-Signal-Transistor, N-channel, Enhancement mode. The device is dv /dt rated and Pb-free lead-plating. It has Vds of 60 V, Rds(on)max is 3.5 Ω and Id is 0.28 A. It is Halogen-free, P-channel Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.
100% lead-free
Maximum power dissipation is 360mW
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