Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1
- RS庫存編號:
- 250-0541
- 製造零件編號:
- BSS138WH6327XTSA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD6,900.00
(不含稅)
TWD7,260.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 15,000 件從 2026年12月10日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD2.30 | TWD6,900.00 |
| 6000 - 6000 | TWD2.10 | TWD6,300.00 |
| 9000 + | TWD2.00 | TWD6,000.00 |
* 參考價格
- RS庫存編號:
- 250-0541
- 製造零件編號:
- BSS138WH6327XTSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-323 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6000mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-323 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6000mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 60V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSS138WH6327XTSA1
This n-channel enhancement device is a Compact surface-mount transistor designed for switching and amplification in constrained assemblies. It operates over a wide thermal range and is suited to environments requiring elevated temperature tolerance and standardised automotive qualification. The package facilitates automated soldering onto board assemblies where small-signal handling and thermal performance are required.
Features and Benefits:
• 60V maximum drain-source voltage enables higher-voltage switching capability
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation
Applications
• Suitable for signal switching in Compact control modules
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices
What are the permissible gate-voltage limits?
The gate may be driven up to 20V relative to the source before gate constraints are exceeded.
How does gate charge affect drive requirements?
An 80 nC typical gate charge at rated drive implies moderate transient energy is required from the gate driver.
What thermal extremes can the device withstand?
It operates down to -55°C and up to +150°C for broad environmental capability.
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