Infineon IMBG N-Channel MOSFET, 18 A, 1.2 kV N, 7-Pin TO-263 IMBG120R220M1HXTMA1
- RS庫存編號:
- 249-6953
- 製造零件編號:
- IMBG120R220M1HXTMA1
- 製造商:
- Infineon
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額外添加2000件可節省2%
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TWD103,800.00
(不含稅)
TWD108,990.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年11月05日 發貨
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單位 | 每單位 | 每卷* | 節省 |
|---|---|---|---|
| 1000 - 1000 | TWD103.80 | TWD103,800.00 | - |
| 2000 + | TWD100.70 | TWD100,700.00 | 2% |
* 參考價格
- RS庫存編號:
- 249-6953
- 製造零件編號:
- IMBG120R220M1HXTMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | IMBG | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series IMBG | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon silicon carbide MOSFET reduction of system complexity. It directly drive from fly-back controller. Efficiency improvement and cooling effort reduction. Enabling higher frequency.
Very low switching losses
Short circuit withstand time 3 μs
Fully controllable dV/dt
Benchmark gate threshold voltage, VGS(th) = 4.5V
Robust against parasitic turn on, 0V turn-off gate voltage can be applied
Robust body diode for hard commutation
XT interconnection technology for best-in-class thermal performance
Package creepage and clearance distance > 6.1mm
Sense pin for optimized switching performance
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