Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263
- RS庫存編號:
- 248-9312
- 製造零件編號:
- IMBG65R030M1HXTMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 卷，共 1000 件）*
TWD239,800.00
(不含稅)
TWD251,790.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 1000 - 1000 | TWD239.80 | TWD239,800.00 |
| 2000 + | TWD232.60 | TWD232,600.00 |
* 參考價格
- RS庫存編號:
- 248-9312
- 製造零件編號:
- IMBG65R030M1HXTMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | IMBG | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series IMBG | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
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