ROHM R6524KNX3 Type N-Channel MOSFET, 10.7 A, 650 V Enhancement, 3-Pin TO-220 R6524KNX3C16
- RS庫存編號:
- 249-1124
- 製造零件編號:
- R6524KNX3C16
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD249.00
(不含稅)
TWD261.44
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 14 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 48 | TWD124.50 | TWD249.00 |
| 50 - 98 | TWD112.50 | TWD225.00 |
| 100 - 248 | TWD107.00 | TWD214.00 |
| 250 - 498 | TWD104.00 | TWD208.00 |
| 500 + | TWD92.00 | TWD184.00 |
* 參考價格
- RS庫存編號:
- 249-1124
- 製造零件編號:
- R6524KNX3C16
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | R6524KNX3 | |
| Package Type | TO-220 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series R6524KNX3 | ||
Package Type TO-220 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM high-speed switching N channel 650 V, 24 A drain current power MOSFET are high-speed switching products, super junction MOSFETs, that place an emphasis on high efficiency, this series products achieve higher efficiency via high-speed switching, h
Low on-resistance
Ultra fast switching
Parallel use is easy
Pb-free plating
RoHs compliant
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